ZXTD09N50DE6TC
Data Sheet
Attribute
Description
Manufacturer Part Number
ZXTD09N50DE6TC
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 NPN (Dual),...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 50mA, 1A | |
| Collector Cutoff Max | 10nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V | |
| Maximum Power Handling | 1.1W | |
| Transition Freq | 215MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 |
Description
Measures resistance at forward current 10nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 10nA. Features a DC current gain hFE at Ic evaluated at 270mV @ 50mA, 1A. Offers 215MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Peak power 1.1W for device protection. Type of transistor 2 NPN (Dual) for circuit architecture. Peak Vce(on) at Vge 270mV @ 50mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 50V.
