DMMT5551-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
DMMT5551-TP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) Matched Pair | |
| Maximum Collector Amps | 200mA | |
| Max Collector-Emitter Breakdown | 160V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1mA, 10mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Maximum Power Handling | 200mW | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 |
Description
Provides a maximum collector current (Ic) of 200mA. Features a DC current gain hFE at Ic evaluated at 150mV @ 1mA, 10mA. Offers 300MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor 2 NPN (Dual) Matched Pair for circuit architecture. Peak Vce(on) at Vge 150mV @ 1mA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 160V.
