DTC114YE-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
DTC114YE-TP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 3000
Distributor: 113
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 2.71 | ₹ 8,130.00 |
| 9000 | ₹ 2.64 | ₹ 23,760.00 |
| 15000 | ₹ 2.62 | ₹ 39,300.00 |
| 45000 | ₹ 2.55 | ₹ 1,14,750.00 |
| 75000 | ₹ 2.49 | ₹ 1,86,750.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Pre-Biased | |
| Maximum Collector Amps | 70mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Collector Cutoff Max | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V | |
| Maximum Power Handling | 150mW | |
| Transition Freq | 250MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-523 |
Description
Measures resistance at forward current 500nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 70mA. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 300mV @ 250µA, 5mA. Offers 250MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-523 providing mechanical and thermal shielding. Peak power 150mW for device protection. Type of transistor NPN - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 300mV @ 250µA, 5mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
