DTC143ECA-TP

DTC143ECA-TP

Data Sheet

Attribute
Description
Manufacturer Part Number
DTC143ECA-TP
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
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Stock:
2683

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
300000 ₹ 1.23 ₹ 3,69,000.00
150000 ₹ 1.33 ₹ 1,99,500.00
75000 ₹ 1.45 ₹ 1,08,750.00
30000 ₹ 1.65 ₹ 49,500.00
21000 ₹ 1.74 ₹ 36,540.00
15000 ₹ 1.83 ₹ 27,450.00
9000 ₹ 1.99 ₹ 17,910.00
6000 ₹ 2.12 ₹ 12,720.00
3000 ₹ 2.39 ₹ 7,170.00
1000 ₹ 2.93 ₹ 2,930.00
500 ₹ 3.35 ₹ 1,675.00
100 ₹ 4.63 ₹ 463.00
10 ₹ 7.50 ₹ 75.00
1 ₹ 12.50 ₹ 12.50

Product Attributes

Type Description
Category
Transistor Class NPN - Pre-Biased
Maximum Collector Amps 100mA
Max Collector-Emitter Breakdown 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Collector Cutoff Max 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Maximum Power Handling 200mW
Transition Freq 250MHz
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current 500nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 100mA. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 300mV @ 500µA, 10mA. Offers 250MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 300mV @ 500µA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.

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