2N3700UB

2N3700UB

Data Sheet

Attribute
Description
Manufacturer Part Number
2N3700UB
Description
No description available
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 1A
Max Collector-Emitter Breakdown 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V
Maximum Power Handling 500mW
Transition Freq -
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 50mA, 500mA. Peak power 500mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 50mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 80V.

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