Attribute
Description
Manufacturer Part Number
PDTA114TK,135
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Pre-Biased | |
| Maximum Collector Amps | 100mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA | |
| Collector Cutoff Max | 1µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V | |
| Maximum Power Handling | 250mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 1µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 100mA. Offers a collector cutoff current rated at 1µA. Features a DC current gain hFE at Ic evaluated at 150mV @ 500µA, 10mA. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 250mW for device protection. Type of transistor PNP - Pre-Biased for circuit architecture. Peak Vce(on) at Vge 150mV @ 500µA, 10mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.