Attribute
Description
Manufacturer Part Number
2N6517
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
500mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V | |
| Maximum Power Handling | 625mW | |
| Transition Freq | 200MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1V @ 5mA, 50mA. Offers 200MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) providing mechanical and thermal shielding. Peak power 625mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1V @ 5mA, 50mA for transistor parameters. Highest collector-emitter breakdown voltage 350V.
