MPS6602
Data Sheet
Attribute
Description
Manufacturer Part Number
MPS6602
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
40V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A | |
| Collector Cutoff Max | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 1V | |
| Maximum Power Handling | 625mW | |
| Transition Freq | 100MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current 100nA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 100nA. Features a DC current gain hFE at Ic evaluated at 600mV @ 100mA, 1A. Offers 100MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) providing mechanical and thermal shielding. Peak power 625mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 600mV @ 100mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 40V.
