2SC4511

2SC4511

Data Sheet

Attribute
Description
Manufacturer Part Number
2SC4511
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 6A, 80V
Note : GST will not be applied to orders shipping outside of India

Stock:
1827

Distributor: 128

Lead Time: Not specified

Quantity Unit Price Ext. Price
32000 ₹ 42.36 ₹ 13,55,520.00
16000 ₹ 44.50 ₹ 7,12,000.00
4000 ₹ 48.59 ₹ 1,94,360.00
2000 ₹ 49.75 ₹ 99,500.00
1000 ₹ 52.78 ₹ 52,780.00
200 ₹ 58.56 ₹ 11,712.00
100 ₹ 61.94 ₹ 6,194.00
50 ₹ 73.51 ₹ 3,675.50
10 ₹ 79.12 ₹ 791.20
1 ₹ 118.37 ₹ 118.37

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 6A
Max Collector-Emitter Breakdown 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Cutoff Max 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2A, 4V
Maximum Power Handling 30W
Transition Freq 20MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3 Full Pack

Description

Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 6A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 500mV @ 200mA, 2A. Offers 20MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 30W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 500mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 80V.

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