Attribute
Description
Manufacturer Part Number
SLA4041
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 4 NPN Darlington (Quad) | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 200V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 1.5A | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1.5A, 4V | |
| Maximum Power Handling | 5W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP, Exposed Tab |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 3mA, 1.5A. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 5W for device protection. Type of transistor 4 NPN Darlington (Quad) for circuit architecture. Peak Vce(on) at Vge 1.5V @ 3mA, 1.5A for transistor parameters. Highest collector-emitter breakdown voltage 200V.
