SLA6024
Data Sheet
Attribute
Description
Manufacturer Part Number
SLA6024
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
3 NPN,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 3 NPN, 3 PNP Darlington (3-Phase Bridge) | |
| Maximum Collector Amps | 8A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 10mA, 5A | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 5A, 4V | |
| Maximum Power Handling | 5W | |
| Transition Freq | 50MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP, Exposed Tab |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 10mA, 5A. Offers 50MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 5W for device protection. Type of transistor 3 NPN, 3 PNP Darlington (3-Phase Bridge) for circuit architecture. Peak Vce(on) at Vge 1.5V @ 10mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 60V.