SMA4020
Data Sheet
Attribute
Description
Manufacturer Part Number
SMA4020
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 4 PNP Darlington (Quad) | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A | |
| Collector Cutoff Max | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 4V | |
| Maximum Power Handling | 4W, 20W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP, Exposed Tab |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1.5V @ 6mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case 12-SIP, Exposed Tab providing mechanical and thermal shielding. Peak power 4W, 20W for device protection. Type of transistor 4 PNP Darlington (Quad) for circuit architecture. Peak Vce(on) at Vge 1.5V @ 6mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 60V.