Attribute
Description
Manufacturer Part Number
2STW100
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 2118
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 294.59 | ₹ 294.59 |
| 10 | ₹ 161.98 | ₹ 1,619.80 |
| 100 | ₹ 133.50 | ₹ 13,350.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 25A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 80mA, 20A | |
| Collector Cutoff Max | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 10A, 3V | |
| Maximum Power Handling | 130W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 25A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 3.5V @ 80mA, 20A. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 130W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 3.5V @ 80mA, 20A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
