BD438

BD438
Attribute
Description
Manufacturer Part Number
BD438
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 4A, 45V
Note : GST will not be applied to orders shipping outside of India

Stock:
800

Distributor: 116

Lead Time: Not specified

Quantity Unit Price Ext. Price
16 ₹ 11.65 ₹ 186.40
8 ₹ 11.86 ₹ 94.88
4 ₹ 12.08 ₹ 48.32
2 ₹ 12.29 ₹ 24.58
1 ₹ 12.39 ₹ 12.39

Stock:
3127

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
5 ₹ 67.91 ₹ 339.55
10 ₹ 31.16 ₹ 311.60
100 ₹ 27.42 ₹ 2,742.00
500 ₹ 20.97 ₹ 10,485.00
1000 ₹ 15.54 ₹ 15,540.00
5000 ₹ 15.23 ₹ 76,150.00

Stock:
11329

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 69.42 ₹ 69.42
10 ₹ 32.04 ₹ 320.40
100 ₹ 28.48 ₹ 2,848.00
500 ₹ 21.36 ₹ 10,680.00

Product Attributes

Type Description
Category
Transistor Class PNP
Maximum Collector Amps 4A
Max Collector-Emitter Breakdown 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 200mA, 2A
Collector Cutoff Max 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Maximum Power Handling 36W
Transition Freq 3MHz
Attachment Mounting Style Through Hole
Component Housing Style TO-225AA, TO-126-3

Description

Measures resistance at forward current 100µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 600mV @ 200mA, 2A. Offers 3MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 36W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 600mV @ 200mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 45V.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.