Attribute
Description
Manufacturer Part Number
BD682
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 3185
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 105.91 | ₹ 105.91 |
| 10 | ₹ 48.95 | ₹ 489.50 |
| 100 | ₹ 43.61 | ₹ 4,361.00 |
| 500 | ₹ 33.82 | ₹ 16,910.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 4A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A | |
| Collector Cutoff Max | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V | |
| Maximum Power Handling | 40W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 4A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 2.5V @ 30mA, 1.5A. Mounting style Through Hole for structural integrity. Enclosure/case TO-225AA, TO-126-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 2.5V @ 30mA, 1.5A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
