Attribute
Description
Manufacturer Part Number
BDX53B
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 70
Distributor: 130
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 110.35 | ₹ 110.35 |
| 10 | ₹ 51.78 | ₹ 517.80 |
| 100 | ₹ 45.67 | ₹ 4,567.00 |
| 500 | ₹ 35.82 | ₹ 17,910.00 |
| 1000 | ₹ 29.29 | ₹ 29,290.00 |
| 5000 | ₹ 26.83 | ₹ 1,34,150.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 8A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A | |
| Collector Cutoff Max | 500µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V | |
| Maximum Power Handling | 60W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 2V @ 12mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 60W for device protection. Type of transistor NPN - Darlington for circuit architecture. Peak Vce(on) at Vge 2V @ 12mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
