L6221CD

L6221CD
Attribute
Description
Manufacturer Part Number
L6221CD
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class 4 NPN Darlington (Quad)
Maximum Collector Amps 1.2A
Max Collector-Emitter Breakdown 60V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A
Collector Cutoff Max -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Maximum Power Handling -
Transition Freq -
Attachment Mounting Style Surface Mount
Component Housing Style 20-SOIC (0.295", 7.50mm Width)

Description

Provides a maximum collector current (Ic) of 1.2A. Features a DC current gain hFE at Ic evaluated at 1.4V @ 1A. Mounting style Surface Mount for structural integrity. Enclosure/case 20-SOIC (0.295", 7.50mm Width) providing mechanical and thermal shielding. Type of transistor 4 NPN Darlington (Quad) for circuit architecture. Peak Vce(on) at Vge 1.4V @ 1A for transistor parameters. Highest collector-emitter breakdown voltage 60V.

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