Attribute
Description
Manufacturer Part Number
MJ2501
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 288.91 | ₹ 288.91 |
| 10 | ₹ 191.61 | ₹ 1,916.10 |
| 100 | ₹ 160.81 | ₹ 16,081.00 |
| 500 | ₹ 152.28 | ₹ 76,140.00 |
| 1000 | ₹ 143.62 | ₹ 1,43,620.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 10A | |
| Max Collector-Emitter Breakdown | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 50mA, 10A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V | |
| Maximum Power Handling | 150W | |
| Transition Freq | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | TO-204AA, TO-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 4V @ 50mA, 10A. Mounting style Chassis Mount for structural integrity. Enclosure/case TO-204AA, TO-3 providing mechanical and thermal shielding. Peak power 150W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 4V @ 50mA, 10A for transistor parameters. Highest collector-emitter breakdown voltage 80V.
