Attribute
Description
Manufacturer Part Number
STBV45-AP
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
750mA,...
Manufacturer Lead Time
55 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 750mA | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 135mA, 400mA | |
| Collector Cutoff Max | 250µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 400mA, 5V | |
| Maximum Power Handling | 950mW | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Description
Measures resistance at forward current 250µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 750mA. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 135mA, 400mA. Mounting style Through Hole for structural integrity. Enclosure/case TO-226-3, TO-92-3 (TO-226AA) Formed Leads providing mechanical and thermal shielding. Peak power 950mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.5V @ 135mA, 400mA for transistor parameters. Highest collector-emitter breakdown voltage 400V.
