Attribute
Description
Manufacturer Part Number
TIP147T
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 1508
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 225.17 | ₹ 225.17 |
| 10 | ₹ 111.25 | ₹ 1,112.50 |
| 100 | ₹ 99.68 | ₹ 9,968.00 |
| 500 | ₹ 79.21 | ₹ 39,605.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP - Darlington | |
| Maximum Collector Amps | 10A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 10A | |
| Collector Cutoff Max | 2mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | |
| Maximum Power Handling | 90W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 2mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 10A. Offers a collector cutoff current rated at 2mA. Features a DC current gain hFE at Ic evaluated at 3V @ 40mA, 10A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 90W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 3V @ 40mA, 10A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
