Attribute
Description
Manufacturer Part Number
TIP30C
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
1A,
100V
Note :
GST will not be applied to orders shipping outside of India
Stock: 226
Distributor: 120
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 72 | ₹ 36.61 | ₹ 2,635.92 |
| 20 | ₹ 63.46 | ₹ 1,269.20 |
| 5 | ₹ 97.62 | ₹ 488.10 |
Stock: 1
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 65.71 | ₹ 65.71 |
| 25 | ₹ 39.43 | ₹ 985.75 |
| 100 | ₹ 31.06 | ₹ 3,106.00 |
| 500 | ₹ 28.68 | ₹ 14,340.00 |
| 1000 | ₹ 23.78 | ₹ 23,780.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A | |
| Collector Cutoff Max | 300µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V | |
| Maximum Power Handling | 2W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 300µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 300µA. Features a DC current gain hFE at Ic evaluated at 700mV @ 125mA, 1A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 700mV @ 125mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 100V.
