Attribute
Description
Manufacturer Part Number
ULQ2003D1013TRY
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 20000
Distributor: 116
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 24.84 | ₹ 62,100.00 |
Stock: 9843
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 70.31 | ₹ 70.31 |
| 10 | ₹ 45.39 | ₹ 453.90 |
| 100 | ₹ 37.38 | ₹ 3,738.00 |
| 500 | ₹ 35.60 | ₹ 17,800.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 7 NPN Darlington | |
| Maximum Collector Amps | 500mA | |
| Max Collector-Emitter Breakdown | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V | |
| Maximum Power Handling | - | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 16-SOIC (0.154", 3.90mm Width) |
Description
Provides a maximum collector current (Ic) of 500mA. Features a DC current gain hFE at Ic evaluated at 1.6V @ 500µA, 350mA. Mounting style Surface Mount for structural integrity. Enclosure/case 16-SOIC (0.154", 3.90mm Width) providing mechanical and thermal shielding. Type of transistor 7 NPN Darlington for circuit architecture. Peak Vce(on) at Vge 1.6V @ 500µA, 350mA for transistor parameters. Highest collector-emitter breakdown voltage 50V.
