AT-42070

AT-42070

Data Sheet

Attribute
Description
Manufacturer Part Number
AT-42070
Description
TRANS NPN BIPO 12V 80MA 70-SMD
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 12V
Transition Freq 8GHz
Noise Figure @ f 1.9dB ~ 3dB @ 2GHz ~ 4GHz
Amplification Factor 10.5dB ~ 14dB
Maximum Power Handling 600mW
DC Current Gain (hFE) @ Ic, Vce 30 @ 35mA, 8V
Maximum Collector Amps 80mA
Attachment Mounting Style Surface Mount
Component Housing Style 4-SMD (70 mil)

Description

Measures resistance at forward current 8GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 30 @ 35mA, 8V. Offers 8GHz transition frequency for seamless signal modulation. Delivers 10.5dB ~ 14dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 4-SMD (70 mil) providing mechanical and thermal shielding. Peak power 600mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10.5dB ~ 14dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.

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