Attribute
Description
Manufacturer Part Number
BFS 481 H6327
Manufacturer
Description
TRANS RF NPN 12V 20MA SOT363
Manufacturer Lead Time
16 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 8GHz | |
| Noise Figure @ f | 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz | |
| Amplification Factor | 20dB | |
| Maximum Power Handling | 175mW | |
| DC Current Gain (hFE) @ Ic, Vce | 70 @ 5mA, 8V | |
| Maximum Collector Amps | 20mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-VSSOP, SC-88, SOT-363 |
Description
Measures resistance at forward current 8GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 20mA. Features a DC current gain hFE at Ic evaluated at 70 @ 5mA, 8V. Offers 8GHz transition frequency for seamless signal modulation. Delivers 20dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 6-VSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Peak power 175mW for device protection. Type of transistor 2 NPN (Dual) for circuit architecture. Peak Vce(on) at Vge 20dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
