EC3H02BA-TL-H

EC3H02BA-TL-H

Data Sheet

Attribute
Description
Manufacturer Part Number
EC3H02BA-TL-H
Manufacturer
Description
TRANS NPN 10V 70A ECSP1006-3
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 10V
Transition Freq 7GHz
Noise Figure @ f 1dB @ 1GHz
Amplification Factor 8.5dB
Maximum Power Handling 100mW
DC Current Gain (hFE) @ Ic, Vce 120 @ 20mA, 5V
Maximum Collector Amps 70mA
Attachment Mounting Style Surface Mount
Component Housing Style 3-XFDFN

Description

Measures resistance at forward current 7GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 70mA. Features a DC current gain hFE at Ic evaluated at 120 @ 20mA, 5V. Offers 7GHz transition frequency for seamless signal modulation. Delivers 8.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 3-XFDFN providing mechanical and thermal shielding. Peak power 100mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.5dB for transistor parameters. Highest collector-emitter breakdown voltage 10V.

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