MMBTH10LT1G

MMBTH10LT1G
Attribute
Description
Manufacturer Part Number
MMBTH10LT1G
Manufacturer
Description
VHF/UHF Transistor NPN 25V SOT-23
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 25V
Transition Freq 650MHz
Noise Figure @ f -
Amplification Factor -
Maximum Power Handling 225mW
DC Current Gain (hFE) @ Ic, Vce 60 @ 4mA, 10V
Maximum Collector Amps -
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current 650MHz for LED or diode evaluation. Features a DC current gain hFE at Ic evaluated at 60 @ 4mA, 10V. Offers 650MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor NPN for circuit architecture. Highest collector-emitter breakdown voltage 25V.

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