SD1726

SD1726
Attribute
Description
Manufacturer Part Number
SD1726
Manufacturer
Description
TRANSISTOR NPN RF HF SSB M174
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 55V
Transition Freq -
Noise Figure @ f -
Amplification Factor 14dB
Maximum Power Handling 318W
DC Current Gain (hFE) @ Ic, Vce 18 @ 1.4A, 6V
Maximum Collector Amps 20A
Attachment Mounting Style Surface Mount
Component Housing Style M174

Description

Provides a maximum collector current (Ic) of 20A. Features a DC current gain hFE at Ic evaluated at 18 @ 1.4A, 6V. Delivers 14dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case M174 providing mechanical and thermal shielding. Peak power 318W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 14dB for transistor parameters. Highest collector-emitter breakdown voltage 55V.

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