NE66219-T1-A
Data Sheet
Attribute
Description
Manufacturer Part Number
NE66219-T1-A
Manufacturer
Description
TRANSISTOR NPN 21GHZ MINIMOLD
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 3.3V | |
| Transition Freq | 21GHz | |
| Noise Figure @ f | 1.2dB @ 2GHz | |
| Amplification Factor | 15dB | |
| Maximum Power Handling | 115mW | |
| DC Current Gain (hFE) @ Ic, Vce | 60 @ 5mA, 2V | |
| Maximum Collector Amps | 35mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-523 |
Description
Measures resistance at forward current 21GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 35mA. Features a DC current gain hFE at Ic evaluated at 60 @ 5mA, 2V. Offers 21GHz transition frequency for seamless signal modulation. Delivers 15dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-523 providing mechanical and thermal shielding. Peak power 115mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 15dB for transistor parameters. Highest collector-emitter breakdown voltage 3.3V.
