Attribute
Description
Manufacturer Part Number
NE68033-T1B-R45-A
Manufacturer
Description
TRANSISTOR NPN 10GHZ SOT-23
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 10GHz | |
| Noise Figure @ f | 1.6dB ~ 2.1dB @ 1GHz ~ 4GHz | |
| Amplification Factor | 4.2dB ~ 11dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 10mA, 6V | |
| Maximum Collector Amps | 35mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 10GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 35mA. Features a DC current gain hFE at Ic evaluated at 50 @ 10mA, 6V. Offers 10GHz transition frequency for seamless signal modulation. Delivers 4.2dB ~ 11dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 4.2dB ~ 11dB for transistor parameters. Highest collector-emitter breakdown voltage 10V.
