NE68118-T1-A
Data Sheet
Attribute
Description
Manufacturer Part Number
NE68118-T1-A
Manufacturer
Description
TRANSISTOR NPN 1GHZ SOT343
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 9GHz | |
| Noise Figure @ f | 1.2dB ~ 2.5dB @ 1GHz | |
| Amplification Factor | 14dB | |
| Maximum Power Handling | 150mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 20mA, 8V | |
| Maximum Collector Amps | 65mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Measures resistance at forward current 9GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 65mA. Features a DC current gain hFE at Ic evaluated at 50 @ 20mA, 8V. Offers 9GHz transition frequency for seamless signal modulation. Delivers 14dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-82A, SOT-343 providing mechanical and thermal shielding. Peak power 150mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 14dB for transistor parameters. Highest collector-emitter breakdown voltage 10V.
