NE68518-T1-A
Data Sheet
Attribute
Description
Manufacturer Part Number
NE68518-T1-A
Manufacturer
Description
TRANSISTOR NPN 2GHZ SOT343
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 6V | |
| Transition Freq | 12GHz | |
| Noise Figure @ f | 1.5dB ~ 2.5dB @ 2GHz | |
| Amplification Factor | 8.5dB | |
| Maximum Power Handling | 150mW | |
| DC Current Gain (hFE) @ Ic, Vce | 75 @ 10mA, 3V | |
| Maximum Collector Amps | 30mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Measures resistance at forward current 12GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Features a DC current gain hFE at Ic evaluated at 75 @ 10mA, 3V. Offers 12GHz transition frequency for seamless signal modulation. Delivers 8.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-82A, SOT-343 providing mechanical and thermal shielding. Peak power 150mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 8.5dB for transistor parameters. Highest collector-emitter breakdown voltage 6V.
