Attribute
Description
Manufacturer Part Number
MMBT918
Manufacturer
Description
TRANSISTOR RF NPN SOT-23
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 15V | |
| Transition Freq | 600MHz | |
| Noise Figure @ f | 6dB @ 60MHz | |
| Amplification Factor | 15dB | |
| Maximum Power Handling | 225mW | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 3mA, 1V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 600MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 20 @ 3mA, 1V. Offers 600MHz transition frequency for seamless signal modulation. Delivers 15dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 15dB for transistor parameters. Highest collector-emitter breakdown voltage 15V.
