Attribute
Description
Manufacturer Part Number
MMBTH10RG
Manufacturer
Description
TRANSISTOR RF NPN SOT23
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 40V | |
| Transition Freq | 450MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | - | |
| Maximum Power Handling | 225mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 1mA, 6V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 450MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 50 @ 1mA, 6V. Offers 450MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor NPN for circuit architecture. Highest collector-emitter breakdown voltage 40V.
