MRF422

MRF422

Data Sheet

Attribute
Description
Manufacturer Part Number
MRF422
Description
TRANS RF NPN 35V 20A 211-11
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 35V
Transition Freq -
Noise Figure @ f -
Amplification Factor 13dB
Maximum Power Handling 150W
DC Current Gain (hFE) @ Ic, Vce 15 @ 5A, 5V
Maximum Collector Amps 20A
Attachment Mounting Style Chassis Mount
Component Housing Style 211-11, Style 2

Description

Provides a maximum collector current (Ic) of 20A. Features a DC current gain hFE at Ic evaluated at 15 @ 5A, 5V. Delivers 13dB gain to improve signal amplification efficiency. Mounting style Chassis Mount for structural integrity. Enclosure/case 211-11, Style 2 providing mechanical and thermal shielding. Peak power 150W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB for transistor parameters. Highest collector-emitter breakdown voltage 35V.

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