2SC5095-R(TE85L,F)
Data Sheet
Attribute
Description
Manufacturer Part Number
2SC5095-R(TE85L,F)
Manufacturer
Description
TRANSISTOR NPN MM-USM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 10GHz | |
| Noise Figure @ f | 1.8dB @ 2GHz | |
| Amplification Factor | 13dB ~ 7.5dB | |
| Maximum Power Handling | 100mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 7mA, 6V | |
| Maximum Collector Amps | 15mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current 10GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 15mA. Features a DC current gain hFE at Ic evaluated at 50 @ 7mA, 6V. Offers 10GHz transition frequency for seamless signal modulation. Delivers 13dB ~ 7.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 100mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB ~ 7.5dB for transistor parameters. Highest collector-emitter breakdown voltage 10V.
