2SC5108-Y(T5L,F,T)
Data Sheet
Attribute
Description
Manufacturer Part Number
2SC5108-Y(T5L,F,T)
Manufacturer
Description
TRANS RF NPN 10V 1GHZ SSM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 6GHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 11dB | |
| Maximum Power Handling | 100mW | |
| DC Current Gain (hFE) @ Ic, Vce | 120 @ 5mA, 5V | |
| Maximum Collector Amps | 30mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-75, SOT-416 |
Description
Measures resistance at forward current 6GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Features a DC current gain hFE at Ic evaluated at 120 @ 5mA, 5V. Offers 6GHz transition frequency for seamless signal modulation. Delivers 11dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-75, SOT-416 providing mechanical and thermal shielding. Peak power 100mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 11dB for transistor parameters. Highest collector-emitter breakdown voltage 10V.
