HN3C10FUTE85LF
Data Sheet
Attribute
Description
Manufacturer Part Number
HN3C10FUTE85LF
Manufacturer
Description
TRANSISTOR NPN US6
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 2 NPN (Dual) | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 7GHz | |
| Noise Figure @ f | 1.1dB @ 1GHz | |
| Amplification Factor | 11.5dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 80 @ 20mA, 10V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 |
Description
Measures resistance at forward current 7GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 80 @ 20mA, 10V. Offers 7GHz transition frequency for seamless signal modulation. Delivers 11.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 6-TSSOP, SC-88, SOT-363 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor 2 NPN (Dual) for circuit architecture. Peak Vce(on) at Vge 11.5dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
