MT3S15TU(TE85L)
Data Sheet
Attribute
Description
Manufacturer Part Number
MT3S15TU(TE85L)
Manufacturer
Description
TRANS RF NPN 6V 1GHZ UFM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 6V | |
| Transition Freq | 11.5GHz | |
| Noise Figure @ f | 1.6dB @ 1GHz | |
| Amplification Factor | 19dB | |
| Maximum Power Handling | 900mW | |
| DC Current Gain (hFE) @ Ic, Vce | 100 @ 50mA, 5V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Measures resistance at forward current 11.5GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 100 @ 50mA, 5V. Offers 11.5GHz transition frequency for seamless signal modulation. Delivers 19dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 3-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 900mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 19dB for transistor parameters. Highest collector-emitter breakdown voltage 6V.
