MT3S16U(TE85L,F)
Data Sheet
Attribute
Description
Manufacturer Part Number
MT3S16U(TE85L,F)
Manufacturer
Description
TRANS RF NPN 5V 1GHZ USM
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5V | |
| Transition Freq | 4GHz | |
| Noise Figure @ f | 2.4dB @ 1GHz | |
| Amplification Factor | 4.5dBi | |
| Maximum Power Handling | 100mW | |
| DC Current Gain (hFE) @ Ic, Vce | 80 @ 5mA, 1V | |
| Maximum Collector Amps | 60mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-70, SOT-323 |
Description
Measures resistance at forward current 4GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 60mA. Features a DC current gain hFE at Ic evaluated at 80 @ 5mA, 1V. Offers 4GHz transition frequency for seamless signal modulation. Delivers 4.5dBi gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Peak power 100mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 4.5dBi for transistor parameters. Highest collector-emitter breakdown voltage 5V.
