MT3S20P(TE12L,F)
Data Sheet
Attribute
Description
Manufacturer Part Number
MT3S20P(TE12L,F)
Manufacturer
Description
TRANS RF NPN 12V 1GHZ PW-MINI
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 7GHz | |
| Noise Figure @ f | 1.45dB @ 1GHz | |
| Amplification Factor | 16.5dB | |
| Maximum Power Handling | 1.8W | |
| DC Current Gain (hFE) @ Ic, Vce | 100 @ 50mA, 5V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-243AA |
Description
Measures resistance at forward current 7GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 100 @ 50mA, 5V. Offers 7GHz transition frequency for seamless signal modulation. Delivers 16.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case TO-243AA providing mechanical and thermal shielding. Peak power 1.8W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 16.5dB for transistor parameters. Highest collector-emitter breakdown voltage 12V.
