NE3514S02-T1C-A

NE3514S02-T1C-A

Data Sheet

Attribute
Description
Manufacturer Part Number
NE3514S02-T1C-A
Description
HJ-FET NCH 10DB S02
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class HFET
Oscillation Rate Hz 20GHz
Amplification Factor 10dB
Test Condition Voltage 2V
Rated Current 70mA
Signal-to-Noise Degradation 0.75dB
Testing Current Value 10mA
Output Wattage Rating -
Rated Operating Voltage 4V
Component Housing Style 4-SMD, Flat Leads

Description

Measures resistance at forward current 10dB for LED or diode evaluation. Evaluated at current levels indicated by 10mA. Provides a current rating of 70mA. Operates at a frequency of 20GHz. Delivers 10dB gain to improve signal amplification efficiency. Noise level 0.75dB for amplifier or RF efficiency. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Type of transistor HFET for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Operating voltage rating 4V for device specifications. Voltage for testing 2V for component assessment.

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