Attribute
Description
Manufacturer Part Number
NE3515S02-A
Manufacturer
Description
NE3515 Series 4 V 12 GHz X to Ku-Band Super Low Noise Amplif...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | HFET | |
| Oscillation Rate Hz | 12GHz | |
| Amplification Factor | 12.5dB | |
| Test Condition Voltage | 2V | |
| Rated Current | 88mA | |
| Signal-to-Noise Degradation | 0.3dB | |
| Testing Current Value | 10mA | |
| Output Wattage Rating | 14dBm | |
| Rated Operating Voltage | 4V | |
| Component Housing Style | 4-SMD, Flat Leads |
Description
Measures resistance at forward current 12.5dB for LED or diode evaluation. Evaluated at current levels indicated by 10mA. Provides a current rating of 88mA. Operates at a frequency of 12GHz. Delivers 12.5dB gain to improve signal amplification efficiency. Noise level 0.3dB for amplifier or RF efficiency. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Power output 14dBm for optimal device performance. Type of transistor HFET for circuit architecture. Peak Vce(on) at Vge 12.5dB for transistor parameters. Operating voltage rating 4V for device specifications. Voltage for testing 2V for component assessment.