NE3516S02-T1C-A
Data Sheet
Attribute
Description
Manufacturer Part Number
NE3516S02-T1C-A
Manufacturer
Description
IC HJ-FET RF N-CH S02 4-MICROX
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | N-Channel GaAs HJ-FET | |
| Oscillation Rate Hz | 12GHz | |
| Amplification Factor | 14dB | |
| Test Condition Voltage | 2V | |
| Rated Current | 60mA | |
| Signal-to-Noise Degradation | 0.35dB | |
| Testing Current Value | 10mA | |
| Output Wattage Rating | 165mW | |
| Rated Operating Voltage | 4V | |
| Component Housing Style | 4-SMD, Flat Leads |
Description
Measures resistance at forward current 14dB for LED or diode evaluation. Evaluated at current levels indicated by 10mA. Provides a current rating of 60mA. Operates at a frequency of 12GHz. Delivers 14dB gain to improve signal amplification efficiency. Noise level 0.35dB for amplifier or RF efficiency. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Power output 165mW for optimal device performance. Type of transistor N-Channel GaAs HJ-FET for circuit architecture. Peak Vce(on) at Vge 14dB for transistor parameters. Operating voltage rating 4V for device specifications. Voltage for testing 2V for component assessment.