NE6510179A-A

NE6510179A-A

Data Sheet

Attribute
Description
Manufacturer Part Number
NE6510179A-A
Description
HJ-FET GAAS 1.9GHZ 3W 79A
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class HFET
Oscillation Rate Hz 1.9GHz
Amplification Factor 10dB
Test Condition Voltage 3.5V
Rated Current 2.8A
Signal-to-Noise Degradation -
Testing Current Value 200mA
Output Wattage Rating 32.5dBm
Rated Operating Voltage 8V
Component Housing Style 4-SMD, Flat Leads

Description

Measures resistance at forward current 10dB for LED or diode evaluation. Evaluated at current levels indicated by 200mA. Provides a current rating of 2.8A. Operates at a frequency of 1.9GHz. Delivers 10dB gain to improve signal amplification efficiency. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Power output 32.5dBm for optimal device performance. Type of transistor HFET for circuit architecture. Peak Vce(on) at Vge 10dB for transistor parameters. Operating voltage rating 8V for device specifications. Voltage for testing 3.5V for component assessment.

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