NE651R479A-A

NE651R479A-A

Data Sheet

Attribute
Description
Manufacturer Part Number
NE651R479A-A
Description
HJ-FET GAAS 1.9GHZ 1W 79A
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class HFET
Oscillation Rate Hz 1.9GHz
Amplification Factor 12dB
Test Condition Voltage 3.5V
Rated Current 1A
Signal-to-Noise Degradation -
Testing Current Value 50mA
Output Wattage Rating 27dBm
Rated Operating Voltage 8V
Component Housing Style 4-SMD, Flat Leads

Description

Measures resistance at forward current 12dB for LED or diode evaluation. Evaluated at current levels indicated by 50mA. Provides a current rating of 1A. Operates at a frequency of 1.9GHz. Delivers 12dB gain to improve signal amplification efficiency. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Power output 27dBm for optimal device performance. Type of transistor HFET for circuit architecture. Peak Vce(on) at Vge 12dB for transistor parameters. Operating voltage rating 8V for device specifications. Voltage for testing 3.5V for component assessment.

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