1N3070TR

1N3070TR
Attribute
Description
Manufacturer Part Number
1N3070TR
Description
SMALL SIGNAL DIODE 200V 500mA DO-35; Dio; Diode Type:Small S...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 200V
Average DC Output Current 500mA
Forward Voltage (Vf) 1V @ 100mA
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 50ns
Reverse Leakage Current @ Vr 100nA @ 175V
Capacitance at Voltage and Frequency 5pF @ 0V, 1MHz
Heat Dissipation Resistance 300°C/W Ja
Junction Temp Range 175°C (Max)
Attachment Mounting Style Through Hole
Component Housing Style DO-204AH, DO-35, Axial

Description

Measures resistance at forward current 1V @ 100mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 5pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 500mA. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 300°C/W Ja for efficient conduction. Junction operating temperature 175°C (Max) for component protection. Enclosure/case DO-204AH, DO-35, Axial providing mechanical and thermal shielding. Reverse recovery duration 50ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 300°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.

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