BAV19W-TP
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 100V | |
| Average DC Output Current | 200mA | |
| Forward Voltage (Vf) | 1.25V @ 200mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 50ns | |
| Reverse Leakage Current @ Vr | 100nA @ 100V | |
| Capacitance at Voltage and Frequency | 1.5pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 305°C/W Ja | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOD-123 |
Description
Measures resistance at forward current 1.25V @ 200mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 1.5pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 200mA. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 305°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case SOD-123 providing mechanical and thermal shielding. Reverse recovery duration 50ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 305°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
