DL4150-TP
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 50V | |
| Average DC Output Current | 200mA | |
| Forward Voltage (Vf) | 1V @ 200mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 6ns | |
| Reverse Leakage Current @ Vr | 100nA @ 50V | |
| Capacitance at Voltage and Frequency | 2.5pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 300°C/W Ja | |
| Junction Temp Range | 175°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | DO-213AC |
Description
Measures resistance at forward current 1V @ 200mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 2.5pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 200mA. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 300°C/W Ja for efficient conduction. Junction operating temperature 175°C (Max) for component protection. Enclosure/case DO-213AC providing mechanical and thermal shielding. Reverse recovery duration 6ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 300°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
