Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 3.4A (Ta) | |
| Max On-State Resistance | 45 mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 1.4V @ 250µA | |
| Gate Charge at Vgs | 20nC @ 4.5V | |
| Input Cap at Vds | 1630pF @ 15V | |
| Maximum Power Handling | 800mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-UFBGA, WLCSP |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 3.4A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 20nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1630pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 4-UFBGA, WLCSP providing mechanical and thermal shielding. Peak power 800mW for device protection. Peak Rds(on) at Id 20nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 45 mOhm @ 1A, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1.4V @ 250µA for MOSFET threshold level.
