DMP1096UCB4-7
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 12V | |
| Continuous Drain Current at 25C | 2.6A (Ta) | |
| Max On-State Resistance | 102 mOhm @ 500mA, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Gate Charge at Vgs | 3.7nC @ 4.5V | |
| Input Cap at Vds | 251pF @ 6V | |
| Maximum Power Handling | 820mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-UFBGA, CSPBGA |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 2.6A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 12V. Accommodates FET classification identified as MOSFET P-Channel, Metal Oxide. Upholds 3.7nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 251pF @ 6V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 4-UFBGA, CSPBGA providing mechanical and thermal shielding. Peak power 820mW for device protection. Peak Rds(on) at Id 3.7nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 102 mOhm @ 500mA, 4.5V for MOSFET criteria. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
